More-than-universal mobility in double-gate SOI p-FETs with sub-10-nm body thickness - Role of light-hole band and compatibility with uniaxial stress engineering

Shigeki Kobayashi, Masumi Saitoh, Ken Uchida

研究成果: Conference article査読

14 被引用数 (Scopus)

抄録

Hole mobility (μh) enhancement by double gate (DG) mode in (001)/〈110〉 ultrathin-body SOI pFETs with sub-iOnm SOI thickness (TSOI) is investigated. It is found μh in DG mode (μDG) is greatly enhanced in all the measured TSOI in comparison with single gate mode. μDG of sub-10nm TSOI exceeds even the universal mobility at high surface carrier densities. The higher μDG is attributed to average effective mass reduction due to a population increase in the light hole band. Subband calculations confirm this model. It is also demonstrated that higher μDG is further enhanced by uniaxial stress.

本文言語English
論文番号4419044
ページ(範囲)707-710
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting, IEDM
DOI
出版ステータスPublished - 2007
外部発表はい
イベント2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
継続期間: 2007 12月 102007 12月 12

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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