Multi-stack silicon-direct wafer bonding for 3D MEMS manufacturing

N. Miki, X. Zhang, R. Khanna, A. A. Ayón, D. Ward, S. M. Spearing

研究成果: Article査読

79 被引用数 (Scopus)

抄録

Multi-stack wafer bonding is one of the most promising fabrication techniques for creating three-dimensional (3D) microstructures. However, there are several bonding issues that have to be faced and overcome to build multilayered structures successfully. Among these are: (1) chemical residues on surfaces to be bonded originating from the fabrication processes prior to bonding; (2) increased stiffness due to multiple bonded wafers and/or thick wafers; (3) bonding tool effects; (4) defect propagation to other wafer-levels after high-temperature annealing cycles. The problems and the solutions presented here are readily applicable to any microelectromechanical systems project involving the fabrication of multi-stack structures of two or more wafers containing intricate geometries and large etched areas.

本文言語English
ページ(範囲)194-201
ページ数8
ジャーナルSensors and Actuators, A: Physical
103
1-2
DOI
出版ステータスPublished - 2003 1月 15
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 器械工学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 金属および合金
  • 電子工学および電気工学

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