N-channel operation of pentacene thin-film transistors with ultrathin polymer gate buffer layer

Kei Noda; Shinji Tanida; Hiroshi Kawabata; Kazumi Matsushige

doi:10.1016/j.synthmet.2009.10.009

N-channel operation of pentacene thin-film transistors with ultrathin polymer gate buffer layer

Kei Noda, Shinji Tanida, Hiroshi Kawabata, Kazumi Matsushige

研究成果: Article › 査読

9 被引用数 (Scopus)

抄録

N-channel operation of pentacene thin-film transistors with ultrathin poly(methyl methacrylate) (PMMA) gate buffer layer and gold source-drain electrode was observed. We prepared pentacene thin-film transistors with an 8-nm thick PMMA buffer layer on SiO₂ gate insulators and obtained electron and hole field-effect mobilities of 5.3 × 10^-2 cm²/(V s) and 0.21 cm²/(V s), respectively, in a vacuum of 0.1 Pa. In spite of using gold electrodes with a high work function, the electron mobility was considerably improved in comparison with previous studies, because the ultrathin PMMA film could decrease electron traps on SiO₂ surfaces, and enhance the electron accumulation by applied gate voltages.

本文言語	English
ページ（範囲）	83-87
ページ数	5
ジャーナル	Synthetic Metals
巻	160
号	1-2
DOI	https://doi.org/10.1016/j.synthmet.2009.10.009
出版ステータス	Published - 2010 1月
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
材料力学
機械工学
金属および合金
材料化学

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10.1016/j.synthmet.2009.10.009

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title = "N-channel operation of pentacene thin-film transistors with ultrathin polymer gate buffer layer",

abstract = "N-channel operation of pentacene thin-film transistors with ultrathin poly(methyl methacrylate) (PMMA) gate buffer layer and gold source-drain electrode was observed. We prepared pentacene thin-film transistors with an 8-nm thick PMMA buffer layer on SiO2 gate insulators and obtained electron and hole field-effect mobilities of 5.3 × 10-2 cm2/(V s) and 0.21 cm2/(V s), respectively, in a vacuum of 0.1 Pa. In spite of using gold electrodes with a high work function, the electron mobility was considerably improved in comparison with previous studies, because the ultrathin PMMA film could decrease electron traps on SiO2 surfaces, and enhance the electron accumulation by applied gate voltages.",

keywords = "Ambipolar transport, Electron trap, Gate buffer layer, Organic thin-film transistor, Pentacene",

author = "Kei Noda and Shinji Tanida and Hiroshi Kawabata and Kazumi Matsushige",

note = "Funding Information: This work was partly supported by Global Center of Excellence (G-COE) program of the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

year = "2010",

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doi = "10.1016/j.synthmet.2009.10.009",

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T1 - N-channel operation of pentacene thin-film transistors with ultrathin polymer gate buffer layer

AU - Noda, Kei

AU - Tanida, Shinji

AU - Kawabata, Hiroshi

AU - Matsushige, Kazumi

N1 - Funding Information: This work was partly supported by Global Center of Excellence (G-COE) program of the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2010/1

Y1 - 2010/1

N2 - N-channel operation of pentacene thin-film transistors with ultrathin poly(methyl methacrylate) (PMMA) gate buffer layer and gold source-drain electrode was observed. We prepared pentacene thin-film transistors with an 8-nm thick PMMA buffer layer on SiO2 gate insulators and obtained electron and hole field-effect mobilities of 5.3 × 10-2 cm2/(V s) and 0.21 cm2/(V s), respectively, in a vacuum of 0.1 Pa. In spite of using gold electrodes with a high work function, the electron mobility was considerably improved in comparison with previous studies, because the ultrathin PMMA film could decrease electron traps on SiO2 surfaces, and enhance the electron accumulation by applied gate voltages.

AB - N-channel operation of pentacene thin-film transistors with ultrathin poly(methyl methacrylate) (PMMA) gate buffer layer and gold source-drain electrode was observed. We prepared pentacene thin-film transistors with an 8-nm thick PMMA buffer layer on SiO2 gate insulators and obtained electron and hole field-effect mobilities of 5.3 × 10-2 cm2/(V s) and 0.21 cm2/(V s), respectively, in a vacuum of 0.1 Pa. In spite of using gold electrodes with a high work function, the electron mobility was considerably improved in comparison with previous studies, because the ultrathin PMMA film could decrease electron traps on SiO2 surfaces, and enhance the electron accumulation by applied gate voltages.

KW - Ambipolar transport

KW - Electron trap

KW - Gate buffer layer

KW - Organic thin-film transistor

KW - Pentacene

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JO - Synthetic Metals

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N-channel operation of pentacene thin-film transistors with ultrathin polymer gate buffer layer

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