@inproceedings{de3de9d30aed4192aac7aba8609eec4a,
title = "NanoBridge Technology for Embedded Novolatile Memory Application",
abstract = "NanoBridge (NB) is a kind of electrochemical resistive-change device using Cu ion migration from Cu interconnects into electrolyte. NBs are integrated by only two additional masks in a standard Cu-BEOL without scarifying CMOS performance. The newly developed split Cu electrode enables the lower set voltage (2.2V) and superior retention, which have been demonstrated in a 28 nm-node. High density embedded nonvolatile NB memory macro in a 65nm technology is successfully developed with P E=30 ns 30 ns programming based on the highly reliable and low-cost manufacturable NB technology. High yield is achieved with satisfying 30ns read, and more than 10 years retention at 150°C. NB properties can be systematically adjusted by tailoring the NB stack, achieving to broaden NB applications.",
keywords = "atom switch, CBRAM, conducting bridge, memory, nanobridge, nonvolatile, ReRAM",
author = "Munehiro Tada",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Memory Workshop, IMW 2022 ; Conference date: 15-03-2022 Through 18-03-2022",
year = "2022",
doi = "10.1109/IMW52921.2022.9779309",
language = "English",
series = "2022 IEEE International Memory Workshop, IMW 2022 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 IEEE International Memory Workshop, IMW 2022 - Proceedings",
}