Natural ordering of ZnO1-xSex grown by radical source MBE

K. Iwata; A. Yamada; P. Fons; K. Matsubara; S. Niki

doi:10.1016/S0022-0248(02)02206-6

Natural ordering of ZnO_1-xSe_x grown by radical source MBE

K. Iwata, A. Yamada, P. Fons, K. Matsubara, S. Niki

研究成果: Conference article › 査読

6 被引用数 (Scopus)

抄録

We have grown the compound semiconductor ZnO_1-xSe_x by radical source MBE. SIMS depth profile of Se concentration shows the compositional ordering of the ZnO_1-xSe_x layers. The period of ZnO_1-xSe_x natural compositional ordering decreases with increasing Se concentration. The lateral coherence of the compositional alternations of ZnO_1-xSe_x cannot be explained without taking into account the dynamical surface processes into consideration.

本文言語	English
ページ（範囲）	633-637
ページ数	5
ジャーナル	Journal of Crystal Growth
巻	251
号	1-4
DOI	https://doi.org/10.1016/S0022-0248(02)02206-6
出版ステータス	Published - 2003 4月
外部発表	はい
イベント	Proceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States 継続期間: 2002 9月 15 → 2002 9月 20

ASJC Scopus subject areas

凝縮系物理学
無機化学
材料化学

文献へのアクセス

10.1016/S0022-0248(02)02206-6

他のファイルとリンク

引用スタイル

@article{bc9b85c9c19e47678c4b71153801d961,

title = "Natural ordering of ZnO1-xSex grown by radical source MBE",

abstract = "We have grown the compound semiconductor ZnO1-xSex by radical source MBE. SIMS depth profile of Se concentration shows the compositional ordering of the ZnO1-xSex layers. The period of ZnO1-xSex natural compositional ordering decreases with increasing Se concentration. The lateral coherence of the compositional alternations of ZnO1-xSex cannot be explained without taking into account the dynamical surface processes into consideration.",

keywords = "A1. Bandgap engineering, A1. Self-ordering, A3. Molecular beam epitaxy, B1. Zinc oxide, B2. Semiconducting II-VI materials",

author = "K. Iwata and A. Yamada and P. Fons and K. Matsubara and S. Niki",

year = "2003",

month = apr,

doi = "10.1016/S0022-0248(02)02206-6",

language = "English",

volume = "251",

pages = "633--637",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Natural ordering of ZnO1-xSex grown by radical source MBE

AU - Iwata, K.

AU - Yamada, A.

AU - Fons, P.

AU - Matsubara, K.

AU - Niki, S.

PY - 2003/4

Y1 - 2003/4

N2 - We have grown the compound semiconductor ZnO1-xSex by radical source MBE. SIMS depth profile of Se concentration shows the compositional ordering of the ZnO1-xSex layers. The period of ZnO1-xSex natural compositional ordering decreases with increasing Se concentration. The lateral coherence of the compositional alternations of ZnO1-xSex cannot be explained without taking into account the dynamical surface processes into consideration.

AB - We have grown the compound semiconductor ZnO1-xSex by radical source MBE. SIMS depth profile of Se concentration shows the compositional ordering of the ZnO1-xSex layers. The period of ZnO1-xSex natural compositional ordering decreases with increasing Se concentration. The lateral coherence of the compositional alternations of ZnO1-xSex cannot be explained without taking into account the dynamical surface processes into consideration.

KW - A1. Bandgap engineering

KW - A1. Self-ordering

KW - A3. Molecular beam epitaxy

KW - B1. Zinc oxide

KW - B2. Semiconducting II-VI materials

UR - http://www.scopus.com/inward/record.url?scp=0037380471&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037380471&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(02)02206-6

DO - 10.1016/S0022-0248(02)02206-6

M3 - Conference article

AN - SCOPUS:0037380471

SN - 0022-0248

VL - 251

SP - 633

EP - 637

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - Proceedings of the Molecular Beam Epitaxy 2002

Y2 - 15 September 2002 through 20 September 2002

ER -