Nitrogen-doped ZnO layers were grown on sapphire substrates by radical source molecular beam epitaxy by simultaneously introducing O2 and N2 via a RF radical source. Reflection high-energy electron diffraction and X-ray diffraction measurements revealed that high N2/O2 flow ratios induced growth twins into the ZnO layer. A nitrogen-doped ZnO fabricated using a N2/O2 flow ratio of 10% was found to have a chemical nitrogen concentration of 1×1019 cm-3. However, type conversion from n-type to p-type did not occur while large nitrogen incorporation was observed to induce extended defects.
|ジャーナル||Journal of Crystal Growth|
|出版ステータス||Published - 2000 2月|
|イベント||The 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques - Tsukuba, Jpn|
継続期間: 1999 7月 28 → 1999 7月 30
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