TY - JOUR
T1 - Numerical simulation of the discharge in d.c. magnetron sputtering
AU - Shidoji, Eiji
AU - Nakano, Nobuhiko
AU - Makabe, Toshiaki
N1 - Funding Information:
This work is partly supported by a Grant from the Asahi Glass Foundation.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 1999/8/30
Y1 - 1999/8/30
N2 - Numerical simulation of d.c. magnetron discharge for sputtering in Ar is performed using a hybrid model consisting of a particle model and a fluid model. The various discharges with different anode's size are simulated to investigate the effect of film conductivity on the anode and the substrate. In the case of a large area anode formed by the deposition of conductive material, the plasma potential becomes higher, suppressing the excess electron flux to the large anode. In the case of a small anode formed by an non-conductive film deposition, the plasma potential becomes lower, dragging a large number of electrons into the small anode. The low plasma potential lowers the potential difference between the cathode and plasma, and the production rate of an electron-ion pair decreases in the cathode sheath region under a constantly applied voltage mode, therefore decreasing the plasma density. It is shown that the plasma potential and the density changes with film conductivity or anode size under a constantly applied voltage. High energy ion injection to the central part of the glass substrate is estimated at the beginning of the film deposition. This implies that the film property at the central part of the non-conductive substrate will differ from the one at the other position due to the difference of the ion impact to the substrate.
AB - Numerical simulation of d.c. magnetron discharge for sputtering in Ar is performed using a hybrid model consisting of a particle model and a fluid model. The various discharges with different anode's size are simulated to investigate the effect of film conductivity on the anode and the substrate. In the case of a large area anode formed by the deposition of conductive material, the plasma potential becomes higher, suppressing the excess electron flux to the large anode. In the case of a small anode formed by an non-conductive film deposition, the plasma potential becomes lower, dragging a large number of electrons into the small anode. The low plasma potential lowers the potential difference between the cathode and plasma, and the production rate of an electron-ion pair decreases in the cathode sheath region under a constantly applied voltage mode, therefore decreasing the plasma density. It is shown that the plasma potential and the density changes with film conductivity or anode size under a constantly applied voltage. High energy ion injection to the central part of the glass substrate is estimated at the beginning of the film deposition. This implies that the film property at the central part of the non-conductive substrate will differ from the one at the other position due to the difference of the ion impact to the substrate.
KW - Conductivity
KW - Ion bombardment
KW - Magnetron
KW - Simulation
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U2 - 10.1016/S0040-6090(99)00151-0
DO - 10.1016/S0040-6090(99)00151-0
M3 - Conference article
AN - SCOPUS:0033170249
SN - 0040-6090
VL - 351
SP - 37
EP - 41
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1-2
T2 - Proceedings of the 1998 2nd International Confernce on Coatings on Glass (ICCG)
Y2 - 6 September 1998 through 10 September 1998
ER -