Numerical study of C-V characteristics of double-gate ultrathin SOI MOSFETs

Hiroshi Watanabe; Ken Uchida; Atsuhiro Kinoshita

doi:10.1109/TED.2006.887053

Numerical study of C-V characteristics of double-gate ultrathin SOI MOSFETs

Hiroshi Watanabe
, Ken Uchida
, Atsuhiro Kinoshita

研究成果: Article › 査読

9 被引用数 (Scopus)

抄録

Capacitance-voltage (C-V) characteristics of double-gate ultrathin silicon-on-insulator (SOI) MOSFETs are numerically investigated in detail. The measured back-gate bias dependence is reproduced by the Poisson-Schrödinger solver including the highly precise physical models for many-body interactions of carrier-carrier and carrier-ion, and for incomplete ionization of doping impurities in whole semiconductor regions of n⁺poly-Si/oxide/SOI/oxide/p-Si capacitor including the volume inversion. In addition, we study the higher subband effect at higher temperature in detail, in order to deduce the impacts of self-heating and nonstatic transport.

本文言語	English
ページ（範囲）	52-58
ページ数	7
ジャーナル	IEEE Transactions on Electron Devices
巻	54
号	1
DOI	https://doi.org/10.1109/TED.2006.887053
出版ステータス	Published - 2007 1月
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

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10.1109/TED.2006.887053

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author = "Hiroshi Watanabe and Ken Uchida and Atsuhiro Kinoshita",

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AU - Uchida, Ken

AU - Kinoshita, Atsuhiro

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Y1 - 2007/1

N2 - Capacitance-voltage (C-V) characteristics of double-gate ultrathin silicon-on-insulator (SOI) MOSFETs are numerically investigated in detail. The measured back-gate bias dependence is reproduced by the Poisson-Schrödinger solver including the highly precise physical models for many-body interactions of carrier-carrier and carrier-ion, and for incomplete ionization of doping impurities in whole semiconductor regions of n+poly-Si/oxide/SOI/oxide/p-Si capacitor including the volume inversion. In addition, we study the higher subband effect at higher temperature in detail, in order to deduce the impacts of self-heating and nonstatic transport.

AB - Capacitance-voltage (C-V) characteristics of double-gate ultrathin silicon-on-insulator (SOI) MOSFETs are numerically investigated in detail. The measured back-gate bias dependence is reproduced by the Poisson-Schrödinger solver including the highly precise physical models for many-body interactions of carrier-carrier and carrier-ion, and for incomplete ionization of doping impurities in whole semiconductor regions of n+poly-Si/oxide/SOI/oxide/p-Si capacitor including the volume inversion. In addition, we study the higher subband effect at higher temperature in detail, in order to deduce the impacts of self-heating and nonstatic transport.

KW - Confinement

KW - Double-gate

KW - MOS devices

KW - Silicon-on-insulator (SOI)

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JO - IEEE Transactions on Electron Devices

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Numerical study of C-V characteristics of double-gate ultrathin SOI MOSFETs

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