Observation of interdiffusion in ZnO/CuInSe2 heterostructures and its effect on film properties

Ralf Hunger; Paul Fons; Kakuya Iwata; Akimasa Yamada; Koji Matsubara; Shigeru Niki; Ken Nakahara; Hidemi Takasu

doi:10.1557/proc-668-h8.21

Observation of interdiffusion in ZnO/CuInSe₂ heterostructures and its effect on film properties

Ralf Hunger, Paul Fons, Kakuya Iwata, Akimasa Yamada, Koji Matsubara, Shigeru Niki, Ken Nakahara, Hidemi Takasu

研究成果: Article › 査読

5 被引用数 (Scopus)

抄録

ZnO films were grown directly on epitaxial CuInSe₂ (001) (CIS) by radical-source molecular beam epitaxy (RS-MBE). The substrate-film interdiffusion was investigated dependent on the ZnO growth temperature. Secondary Ion Mass Spectroscopy (SIMS) profiles indicate the mutual temperature-activated diffusion of Zn and In at a growth temperature of 440°C which is absent at 250°C. Zn indiffusion into the CIS substrate leads to characteristic changes in the photoluminescence (PL) properties, whereas the In outdiffusion into the growing ZnO film causes an increased carrier concentration.

本文言語	English
ページ（範囲）	H8211-H8216
ジャーナル	Materials Research Society Symposium - Proceedings
巻	668
DOI	https://doi.org/10.1557/proc-668-h8.21
出版ステータス	Published - 2001
外部発表	はい

ASJC Scopus subject areas

材料科学（全般）
凝縮系物理学
材料力学
機械工学

文献へのアクセス

10.1557/proc-668-h8.21

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引用スタイル

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T1 - Observation of interdiffusion in ZnO/CuInSe2 heterostructures and its effect on film properties

AU - Hunger, Ralf

AU - Fons, Paul

AU - Iwata, Kakuya

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AU - Matsubara, Koji

AU - Niki, Shigeru

AU - Nakahara, Ken

AU - Takasu, Hidemi

PY - 2001

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AB - ZnO films were grown directly on epitaxial CuInSe2 (001) (CIS) by radical-source molecular beam epitaxy (RS-MBE). The substrate-film interdiffusion was investigated dependent on the ZnO growth temperature. Secondary Ion Mass Spectroscopy (SIMS) profiles indicate the mutual temperature-activated diffusion of Zn and In at a growth temperature of 440°C which is absent at 250°C. Zn indiffusion into the CIS substrate leads to characteristic changes in the photoluminescence (PL) properties, whereas the In outdiffusion into the growing ZnO film causes an increased carrier concentration.

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