@article{0a0c594f317e466cbdd51a7e0369c327,
title = "Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures",
abstract = "Very high two-dimensional hole gas (2DHG) drift mobility of 3100 cm2 V s is obtained at extremely high density of 41× 1011 cm-2 in the modulation doped, 20 nm thick, strained Ge quantum well (QW) of SiGe heterostructure at room temperature. Very high 2DHG density is achieved by increasing the boron modulation doping, reducing the spacer layer thickness located between it and Ge QW, and increasing the valence-band offset of Ge QW, which also results in the enhancement of mobility. The obtained 2DHG mobility and carrier density exceed those reported for two-dimensional electron gas in the strained Si QW of SiGe heterostructures.",
author = "M. Myronov and K. Sawano and Y. Shiraki and T. Mouri and Itoh, {K. M.}",
note = "Funding Information: This work was supported by “High-Tech Research Center” Project for Private Universities: matching fund subsidy from MEXT 2002–2007, JSPS funding for young researchers under Grant No. 18760019, in part by Grant-in-Aid for Scientific Research by MEXT, Specially Promoted Research under Grant No. 18001002, and in part by Special Coordination Funds for Promoting Science and Technology.",
year = "2007",
doi = "10.1063/1.2773744",
language = "English",
volume = "91",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "8",
}