On the behavior of interaction of a Pt-related center with radiation-induced defects and the trace platinum detection

Y. M. Weng; E. Ohta; M. Sakata

doi:10.1063/1.343133

On the behavior of interaction of a Pt-related center with radiation-induced defects and the trace platinum detection

Y. M. Weng, E. Ohta, M. Sakata

研究成果: Article › 査読

10 被引用数 (Scopus)

抄録

The interaction of platinum (Pt) with electron irradiation-induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially the A center, and lowers the annealing temperature to 220°C for the A center and to 140°C for the divacancy and E center. The level E_a (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center. A method is suggested for activating the platinum in silicon with low-energy electron irradiation and subsequent thermal annealing and detecting it by deep level transient spectroscopy (DLTS).

本文言語	English
ページ（範囲）	515-518
ページ数	4
ジャーナル	Journal of Applied Physics
巻	65
号	2
DOI	https://doi.org/10.1063/1.343133
出版ステータス	Published - 1989
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（全般）

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10.1063/1.343133

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N2 - The interaction of platinum (Pt) with electron irradiation-induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially the A center, and lowers the annealing temperature to 220°C for the A center and to 140°C for the divacancy and E center. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center. A method is suggested for activating the platinum in silicon with low-energy electron irradiation and subsequent thermal annealing and detecting it by deep level transient spectroscopy (DLTS).

AB - The interaction of platinum (Pt) with electron irradiation-induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially the A center, and lowers the annealing temperature to 220°C for the A center and to 140°C for the divacancy and E center. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center. A method is suggested for activating the platinum in silicon with low-energy electron irradiation and subsequent thermal annealing and detecting it by deep level transient spectroscopy (DLTS).

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JO - Journal of Applied Physics

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On the behavior of interaction of a Pt-related center with radiation-induced defects and the trace platinum detection

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