抄録
A 640 Gb/s high-speed ATM Switching System that is based on the technologies of advanced MCM-C, 0.25μm CMOS and optical WDM interconnection is fabricated for future B-ISDN services. A 40-layer, 160 mm × 114 mm Ceramic MCM realizes the basic ATM switch module with 80 Gb/s throughput. The basic unit ATM switch MCM-C consists of an 8-chip advanced 0.25 μm CMOS VLSI and 32 chip I/O bipolar VLSIs. The MCM employs a 40 layer, very-thin-layer ceramic MCM and a uniquely structured closed loop type liquid cooling system is adopted to cope with the MCM's high-power dissipation of 230 W. The MCM is mounted on a 32 cm × 50 cm mother board. A three-stage ATM switch is realized by optical WDM interconnection between the high-performance MCMs. For WDM interconnection, newly developed compact size 10 Gb/s, 8 WDM optical transmitters and receivers are used. An optical WDM router based on an AWG (Arrayed Waveguide Router) is used for mesh interconnection of boards. The optical WDM interconnect has 640 Gb/s throughput and easy, simple interconnection. The system, MCM, and Optical WDM interconnection will be applied to future B-ISDN backbone networks.
本文言語 | English |
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ページ(範囲) | 26-33 |
ページ数 | 8 |
ジャーナル | Proceedings - Electronic Components and Technology Conference |
出版ステータス | Published - 1999 1月 1 |
外部発表 | はい |
イベント | Proceedings of the 1999 49th Electronic Components and Technology Conference (ECTC) - San Diego, CA, USA 継続期間: 1999 6月 1 → 1999 6月 4 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学