抄録
The influence of rare gas dilution on absolute oxygen atom density in O2 radio frequency (RF) capacitively coupled plasma (CCP) was investigated by vacuum ultraviolet absorption spectroscopy (VUVAS) with pulse modulation of main plasma. Helium dilution is effective for raising O atom density at high total pressure (5 Torr) due to the Penning ionization by metastable He. Argon and Krypton dilution keeps O atom density same to pure O2 case at 0.5 Torr while helium dilution lowers the O atom density by the enhanced diffusion flux of O atoms toward walls. The trend is supported by a diffusion model of O atoms.
本文言語 | English |
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ページ(範囲) | 489-493 |
ページ数 | 5 |
ジャーナル | Thin Solid Films |
巻 | 506-507 |
DOI | |
出版ステータス | Published - 2006 5月 26 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 表面および界面
- 表面、皮膜および薄膜
- 金属および合金
- 材料化学