P-WELL/N-WELL COMPATIBLE CMOS PROCESSING FOR ASIC APPLICATIONS.

Tadahiro Kuroda; Hiroyuki Akiba; Hiroaki Suzuki; Takao Aoki

P-WELL/N-WELL COMPATIBLE CMOS PROCESSING FOR ASIC APPLICATIONS.

Tadahiro Kuroda, Hiroyuki Akiba, Hiroaki Suzuki, Takao Aoki

研究成果: Conference contribution

抄録

This paper describes p-well/n-well compatible CMOS device structure and processing for ASIC applications, together with a design methodology and a scaling scenario. Process optimization has been carried out with careful adjustment of impurity profiles. Equivalent characteristics have been realized in both processes in regard to transistor characteristics, speed performance and latch-up immunity. Scaling philosophy has also been established and its properties are demonstrated.

本文言語	English
ホスト出版物のタイトル	Conference on Solid State Devices and Materials
出版社	Business Cent for Academic Soc Japan
ページ	57-60
ページ数	4
ISBN（印刷版）	493081314X
出版ステータス	Published - 1986 12月 1
外部発表	はい

出版物シリーズ

名前	Conference on Solid State Devices and Materials

ASJC Scopus subject areas

工学（全般）

他のファイルとリンク

引用スタイル

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PY - 1986/12/1

Y1 - 1986/12/1

N2 - This paper describes p-well/n-well compatible CMOS device structure and processing for ASIC applications, together with a design methodology and a scaling scenario. Process optimization has been carried out with careful adjustment of impurity profiles. Equivalent characteristics have been realized in both processes in regard to transistor characteristics, speed performance and latch-up immunity. Scaling philosophy has also been established and its properties are demonstrated.

AB - This paper describes p-well/n-well compatible CMOS device structure and processing for ASIC applications, together with a design methodology and a scaling scenario. Process optimization has been carried out with careful adjustment of impurity profiles. Equivalent characteristics have been realized in both processes in regard to transistor characteristics, speed performance and latch-up immunity. Scaling philosophy has also been established and its properties are demonstrated.

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M3 - Conference contribution

AN - SCOPUS:0022863158

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T3 - Conference on Solid State Devices and Materials

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PB - Business Cent for Academic Soc Japan

ER -

P-WELL/N-WELL COMPATIBLE CMOS PROCESSING FOR ASIC APPLICATIONS.

抄録

出版物シリーズ

ASJC Scopus subject areas

他のファイルとリンク

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