Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(1 1 1)A

T. Fukushima; Y. Hijikata; H. Yaguchi; S. Yoshida; M. Okano; M. Yoshita; H. Akiyama; S. Kuboya; R. Katayama; K. Onabe

doi:10.1016/j.physe.2009.12.011

Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(1 1 1)A

T. Fukushima, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe

研究成果: Article › 査読

16 被引用数 (Scopus)

抄録

We have studied photoluminescence (PL) observed from single isoelectronic traps formed by nitrogen pairs in nitrogen δ-doped GaAs layers grown on GaAs(1 1 1)A substrates. The PL was composed of a single peak with a narrow linewidth of ∼80 μeV. Polarized PL measurements confirmed that the emission from single isoelectronic traps in nitrogen δ-doped GaAs(1 1 1) is unpolarized irrespective of nitrogen pair arrangements. These results can be explained by in-plane isotropy of the samples, which is consistent with the symmetrical property of GaAs(1 1 1), and demonstrate that utilizing (1 1 1) substrate is an effective means for obtaining unpolarized single photons, which are desirable for the application to quantum cryptography.

本文言語	English
ページ（範囲）	2529-2531
ページ数	3
ジャーナル	Physica E: Low-Dimensional Systems and Nanostructures
巻	42
号	10
DOI	https://doi.org/10.1016/j.physe.2009.12.011
出版ステータス	Published - 2010 9月
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
原子分子物理学および光学
凝縮系物理学

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10.1016/j.physe.2009.12.011

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title = "Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(1 1 1)A",

abstract = "We have studied photoluminescence (PL) observed from single isoelectronic traps formed by nitrogen pairs in nitrogen δ-doped GaAs layers grown on GaAs(1 1 1)A substrates. The PL was composed of a single peak with a narrow linewidth of ∼80 μeV. Polarized PL measurements confirmed that the emission from single isoelectronic traps in nitrogen δ-doped GaAs(1 1 1) is unpolarized irrespective of nitrogen pair arrangements. These results can be explained by in-plane isotropy of the samples, which is consistent with the symmetrical property of GaAs(1 1 1), and demonstrate that utilizing (1 1 1) substrate is an effective means for obtaining unpolarized single photons, which are desirable for the application to quantum cryptography.",

keywords = "Isoelectronic trap, Single photon, δ-doping",

author = "T. Fukushima and Y. Hijikata and H. Yaguchi and S. Yoshida and M. Okano and M. Yoshita and H. Akiyama and S. Kuboya and R. Katayama and K. Onabe",

note = "Funding Information: This study was partially supported by Grant-in-Aid for Scientific Research (B) (No. 21360004 ), Japan Society for the Promotion of Science.",

year = "2010",

month = sep,

doi = "10.1016/j.physe.2009.12.011",

language = "English",

volume = "42",

pages = "2529--2531",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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TY - JOUR

T1 - Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(1 1 1)A

AU - Fukushima, T.

AU - Hijikata, Y.

AU - Yaguchi, H.

AU - Yoshida, S.

AU - Okano, M.

AU - Yoshita, M.

AU - Akiyama, H.

AU - Kuboya, S.

AU - Katayama, R.

AU - Onabe, K.

N1 - Funding Information: This study was partially supported by Grant-in-Aid for Scientific Research (B) (No. 21360004 ), Japan Society for the Promotion of Science.

PY - 2010/9

Y1 - 2010/9

N2 - We have studied photoluminescence (PL) observed from single isoelectronic traps formed by nitrogen pairs in nitrogen δ-doped GaAs layers grown on GaAs(1 1 1)A substrates. The PL was composed of a single peak with a narrow linewidth of ∼80 μeV. Polarized PL measurements confirmed that the emission from single isoelectronic traps in nitrogen δ-doped GaAs(1 1 1) is unpolarized irrespective of nitrogen pair arrangements. These results can be explained by in-plane isotropy of the samples, which is consistent with the symmetrical property of GaAs(1 1 1), and demonstrate that utilizing (1 1 1) substrate is an effective means for obtaining unpolarized single photons, which are desirable for the application to quantum cryptography.

AB - We have studied photoluminescence (PL) observed from single isoelectronic traps formed by nitrogen pairs in nitrogen δ-doped GaAs layers grown on GaAs(1 1 1)A substrates. The PL was composed of a single peak with a narrow linewidth of ∼80 μeV. Polarized PL measurements confirmed that the emission from single isoelectronic traps in nitrogen δ-doped GaAs(1 1 1) is unpolarized irrespective of nitrogen pair arrangements. These results can be explained by in-plane isotropy of the samples, which is consistent with the symmetrical property of GaAs(1 1 1), and demonstrate that utilizing (1 1 1) substrate is an effective means for obtaining unpolarized single photons, which are desirable for the application to quantum cryptography.

KW - Isoelectronic trap

KW - Single photon

KW - δ-doping

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U2 - 10.1016/j.physe.2009.12.011

DO - 10.1016/j.physe.2009.12.011

M3 - Article

AN - SCOPUS:77958003985

SN - 1386-9477

VL - 42

SP - 2529

EP - 2531

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 10

ER -

Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(1 1 1)A

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