抄録
We report luminescence from spin triplet states of excitons bound to interstitial carbon-interstitial oxygen defects in silicon. The peak, which we call CT-line, has an energy 2.64 meV lower than 790 meV (C-line), and splits into three peaks by application of magnetic field. Moreover, its peak position does not depend on the angle between the magnetic field direction and crystallographic orientation indicating the quenching of orbital angular momentum of the hole bound to the defect. These observations lead us to conclude that the CT-line is the photoluminescence from a triplet state.
| 本文言語 | English |
|---|---|
| ページ(範囲) | 4552-4554 |
| ページ数 | 3 |
| ジャーナル | Physica B: Condensed Matter |
| 巻 | 404 |
| 号 | 23-24 |
| DOI | |
| 出版ステータス | Published - 2009 12月 15 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- 電子工学および電気工学
フィンガープリント
「Photoluminescence from triplet states of isoelectronic bound excitons at interstitial carbon-intersititial oxygen defects in silicon」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。引用スタイル
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