TY - GEN
T1 - Physical mechanism of enhanced uniaxial stress effect on carrier mobility in ETSOI MOSFETs
AU - Ohashi, Teruyuki
AU - Oda, Shunri
AU - Uchida, Ken
PY - 2013
Y1 - 2013
N2 - This paper presents a comprehensive study of the strain effects on carrier mobility in extremely thin SOI MOSFETs. We demonstrated that the mobility enhancement ratio (Δμe/ μe) increases as SOI thickness (TSOI) decreases from 60 nm to 4 nm under uniaxial <110> tensile stress parallel to the channel. On the other hand, under uniaxial <110> stress perpendicular to the channel (σ//), Δμe/ μedecreases as TSOI decreases in extremely thin SOI MOSFETs with TSOI of less than 10 nm. By measuring the back gate bias dependence of the Δμe/ μe, it is concluded that this Δμe/ μeincrease is originates from the increase of deformation potential (Dac) around MOS interfaces, as well as from the change of effective mass.
AB - This paper presents a comprehensive study of the strain effects on carrier mobility in extremely thin SOI MOSFETs. We demonstrated that the mobility enhancement ratio (Δμe/ μe) increases as SOI thickness (TSOI) decreases from 60 nm to 4 nm under uniaxial <110> tensile stress parallel to the channel. On the other hand, under uniaxial <110> stress perpendicular to the channel (σ//), Δμe/ μedecreases as TSOI decreases in extremely thin SOI MOSFETs with TSOI of less than 10 nm. By measuring the back gate bias dependence of the Δμe/ μe, it is concluded that this Δμe/ μeincrease is originates from the increase of deformation potential (Dac) around MOS interfaces, as well as from the change of effective mass.
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U2 - 10.1149/05009.0171ecst
DO - 10.1149/05009.0171ecst
M3 - Conference contribution
AN - SCOPUS:84885731812
SN - 9781607683575
T3 - ECS Transactions
SP - 171
EP - 174
BT - SiGe, Ge, and Related Compounds 5
PB - Electrochemical Society Inc.
T2 - 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Y2 - 7 October 2012 through 12 October 2012
ER -