Point Defect Changes in CuGaSe2 Induced by Gas Annealing

Akimasa Yamada, Akihiko Nishio, Paul Fons, Hajime Shibata, Koji Matsubara, Shigeru Niki, Hisayuki Nakanishi

研究成果: Conference article査読

3 被引用数 (Scopus)


Epitaxial CuGaSe2 films were grown on GaAs substrates under Cu-excess conditions to obtain stoichiometric compositions. The films were annealed in Ar, Sex or O2 ambients with or without a Cu or Cu-Se cap layer with the intention of changing the intrinsic defect concentrations. Samples were evaluated using low-temperature photoluminescence (PL) measurements. Annealing of the samples dramatically changed the PL spectra indicating that not only interdiffusion had occurred, but defect species and populations were changed. Comprehensive consideration of the changes led to the conclusion that the emissions at 1.62 eV, 1.66 eV and in the range from 1.2 to 1.4 eV are related to specific defects of Se vacancies, Cu vacancy-Se vacancy complexes and interstitial Cu, respectively.

ジャーナルMaterials Research Society Symposium - Proceedings
出版ステータスPublished - 2003
イベントMATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics - San Francisco, CA, United States
継続期間: 2003 4月 222003 4月 25

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学


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