Polarization Processes in Thin Layers of Amorphous MoS2 Obtained by RF Magnetron Sputtering

A. A. Kononov, R. A. Castro-Arata, D. D. Glavnaya, V. M. Stozharov, D. M. Dolginsev, Y. Saito, P. Fons, N. I. Anisimova, A. V. Kolobov

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Abstract: The polarization processes in thin layers of amorphous molybdenum disulfide MoS2 are studied by dielectric spectroscopy techniques. The process of dipole-relaxation polarization is observed. The microscopic parameters of the system are calculated, and the relaxation time of the dipole-polarization process, as well as the activation energies Ea and Eσ of the relaxation process and conductivity, respectively, are determined. The fact that the two activation energies are close to each other suggests that the processes of relaxation and charge transport are driven by the same mechanism.

本文言語English
ページ(範囲)558-562
ページ数5
ジャーナルSemiconductors
54
5
DOI
出版ステータスPublished - 2020 5月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学

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