Preparation of graded-morphology diamond thin films

Yasuaki Einaga; Gyu Sik Kim; Keisuke Ohnishi; Soo Gil Park; Akira Fujishima

doi:10.1016/S0921-5107(00)00559-6

Preparation of graded-morphology diamond thin films

Yasuaki Einaga
, Gyu Sik Kim
, Keisuke Ohnishi
, Soo Gil Park
, Akira Fujishima

研究成果: Article › 査読

16 被引用数 (Scopus)

抄録

Graded-morphology diamond thin films were prepared in a single experimental run using a simple technique during the chemical vapor deposition (CVD) process: one end of the substrate was elevated. We showed that the substrate temperature had a profound effect on the morphology and grain size of the as-deposited lightly boron-doped diamond films. We have discussed the morphological dependence of electrochemical properties as one example of the excellent function of the graded film.

本文言語	English
ページ（範囲）	19-23
ページ数	5
ジャーナル	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
巻	83
号	1-3
DOI	https://doi.org/10.1016/S0921-5107(00)00559-6
出版ステータス	Published - 2001 6月 21
外部発表	はい

ASJC Scopus subject areas

材料科学一般
凝縮系物理学
材料力学
機械工学

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10.1016/S0921-5107(00)00559-6

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title = "Preparation of graded-morphology diamond thin films",

abstract = "Graded-morphology diamond thin films were prepared in a single experimental run using a simple technique during the chemical vapor deposition (CVD) process: one end of the substrate was elevated. We showed that the substrate temperature had a profound effect on the morphology and grain size of the as-deposited lightly boron-doped diamond films. We have discussed the morphological dependence of electrochemical properties as one example of the excellent function of the graded film.",

keywords = "Diamond thin film, Electrochemistry, Graded-morphology",

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note = "Funding Information: We are grateful to Professor D.A. Tryk, The University of Tokyo, for reading the manuscript carefully and for useful discussions. This work was supported by a Grant-in-Aid for Scientific Research on Priority Areas, Electrochemistry of Ordered Interfaces, from the Ministry of Education, Science, Sports and Culture of Japan.",

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AU - Kim, Gyu Sik

AU - Ohnishi, Keisuke

AU - Park, Soo Gil

AU - Fujishima, Akira

N1 - Funding Information: We are grateful to Professor D.A. Tryk, The University of Tokyo, for reading the manuscript carefully and for useful discussions. This work was supported by a Grant-in-Aid for Scientific Research on Priority Areas, Electrochemistry of Ordered Interfaces, from the Ministry of Education, Science, Sports and Culture of Japan.

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N2 - Graded-morphology diamond thin films were prepared in a single experimental run using a simple technique during the chemical vapor deposition (CVD) process: one end of the substrate was elevated. We showed that the substrate temperature had a profound effect on the morphology and grain size of the as-deposited lightly boron-doped diamond films. We have discussed the morphological dependence of electrochemical properties as one example of the excellent function of the graded film.

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KW - Diamond thin film

KW - Electrochemistry

KW - Graded-morphology

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Preparation of graded-morphology diamond thin films

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