@inproceedings{816fa3c3646c4cdcb29dec149d1a8536,
title = "Probing the behaviors of point defects in silicon and germanium using isotope superlattices",
abstract = "In order to probe the fundamental behaviors of point defects in silicon and germanium, we studied the self-diffusion using isotope superlattices. In ion-implanted germanium, vacancies are in thermal equilibrium and transient enhanced diffusion is not present under the experimental conditions employed in this study. In contrast, silicon self-interstitials are supersaturated in ion-implanted silicon and the self-interstitial concentration is going down to the thermal equilibrium value toward the surface.",
author = "M. Uematsu and M. Naganawa and Y. Shimizu and Itoh, \{K. M.\} and K. Sawano and Y. Shiraki and Haller, \{E. E.\}",
year = "2009",
doi = "10.1149/1.3204393",
language = "English",
isbn = "9781566777407",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "51--54",
booktitle = "ECS Transactions - Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009",
edition = "3",
note = "Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting ; Conference date: 04-10-2009 Through 09-10-2009",
}