抄録
Shifts from the expected nuclear magnetic resonance frequencies of antimony and bismuth donors in silicon of greater than a megahertz are observed in electrically detected magnetic resonance spectra. Defects created by ion implantation of the donors are discussed as the source of effective electric field gradients generating these shifts via quadrupole interaction with the nuclear spins. The experimental results are modeled quantitatively by molecular orbital theory for a coupled pair consisting of a donor and a spin-dependent recombination readout center.
本文言語 | English |
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論文番号 | 494001 |
ジャーナル | Nanotechnology |
巻 | 27 |
号 | 49 |
DOI | |
出版ステータス | Published - 2016 11月 8 |
ASJC Scopus subject areas
- バイオエンジニアリング
- 化学一般
- 材料科学一般
- 材料力学
- 機械工学
- 電子工学および電気工学