Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

T. Tawara; H. Kamada; Y. H. Zhang; T. Tanabe; N. I. Cade; D. Ding; S. R. Johnson; H. Gotoh; E. Kuramochi; M. Notomi; T. Sogawa

doi:10.1364/OE.16.005199

Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

T. Tawara
, H. Kamada
, Y. H. Zhang
, T. Tanabe
, N. I. Cade
, D. Ding
, S. R. Johnson
, H. Gotoh
, E. Kuramochi
, M. Notomi
, T. Sogawa

研究成果: Article › 査読

15 被引用数 (Scopus)

抄録

We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic crystal nanocavities. A quality factor (Q) of over 10,000 was achieved by suppressing the material absorption by QDs uncoupled to the cavity mode. High Q cavities exhibited ultra low threshold lasing with a spontaneous emission factor of 0.7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K.

本文言語	English
ページ（範囲）	5199-5205
ページ数	7
ジャーナル	Optics Express
巻	16
号	8
DOI	https://doi.org/10.1364/OE.16.005199
出版ステータス	Published - 2008 4月 14
外部発表	はい

ASJC Scopus subject areas

原子分子物理学および光学

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10.1364/OE.16.005199

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@article{0aea2cb3a42944148312b5a8c724c80a,

title = "Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities",

abstract = "We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic crystal nanocavities. A quality factor (Q) of over 10,000 was achieved by suppressing the material absorption by QDs uncoupled to the cavity mode. High Q cavities exhibited ultra low threshold lasing with a spontaneous emission factor of 0.7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K.",

author = "T. Tawara and H. Kamada and Zhang, \{Y. H.\} and T. Tanabe and Cade, \{N. I.\} and D. Ding and Johnson, \{S. R.\} and H. Gotoh and E. Kuramochi and M. Notomi and T. Sogawa",

year = "2008",

month = apr,

day = "14",

doi = "10.1364/OE.16.005199",

language = "English",

volume = "16",

pages = "5199--5205",

journal = "Optics Express",

issn = "1094-4087",

publisher = "Optica Publishing Group (formerly OSA)",

number = "8",

}

TY - JOUR

T1 - Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

AU - Tawara, T.

AU - Kamada, H.

AU - Zhang, Y. H.

AU - Tanabe, T.

AU - Cade, N. I.

AU - Ding, D.

AU - Johnson, S. R.

AU - Gotoh, H.

AU - Kuramochi, E.

AU - Notomi, M.

AU - Sogawa, T.

PY - 2008/4/14

Y1 - 2008/4/14

N2 - We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic crystal nanocavities. A quality factor (Q) of over 10,000 was achieved by suppressing the material absorption by QDs uncoupled to the cavity mode. High Q cavities exhibited ultra low threshold lasing with a spontaneous emission factor of 0.7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K.

AB - We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic crystal nanocavities. A quality factor (Q) of over 10,000 was achieved by suppressing the material absorption by QDs uncoupled to the cavity mode. High Q cavities exhibited ultra low threshold lasing with a spontaneous emission factor of 0.7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K.

UR - https://www.scopus.com/pages/publications/42149187050

UR - https://www.scopus.com/pages/publications/42149187050#tab=citedBy

U2 - 10.1364/OE.16.005199

DO - 10.1364/OE.16.005199

M3 - Article

C2 - 18542622

AN - SCOPUS:42149187050

SN - 1094-4087

VL - 16

SP - 5199

EP - 5205

JO - Optics Express

JF - Optics Express

IS - 8

ER -

Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

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