Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking

J. T. Muhonen, A. Laucht, S. Simmons, J. P. Dehollain, R. Kalra, F. E. Hudson, S. Freer, K. M. Itoh, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, A. Morello

研究成果: Article査読

116 被引用数 (Scopus)

抄録

Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31P nucleus of a single P donor in isotopically purified 28Si. We find average gate fidelities of 99.95% for the electron and 99.99% for the nuclear spin. These values are above certain error correction thresholds and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware and not the intrinsic behaviour of the qubit.

本文言語English
論文番号154205
ジャーナルJournal of Physics Condensed Matter
27
15
DOI
出版ステータスPublished - 2015 4月 22

ASJC Scopus subject areas

  • 材料科学一般
  • 凝縮系物理学

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