Quantitative evaluation of germanium displacement induced by arsenic implantation using germanium isotope superlattices

Yoko Kawamura, Yasuo Shimizu, Hiroyuki Oshikawa, Masashi Uematsu, Eugene E. Haller, Kohei M. Itoh

研究成果: Article査読

8 被引用数 (Scopus)

抄録

The displacement of germanium (Ge) atoms induced by arsenic (As) ion implantation at room temperature was investigated using Ge isotope superlattices grown by molecular beam epitaxy. The depth profiles of 74Ge isotopes in the 70Ge/natGe isotope superlattices before and after ion implantation were obtained by secondary ion mass spectrometry. By representing the experimental data using a conventional integral model, Ge atomic displacement as a function of depth was obtained, from which we determined that 0.75 nm is the critical displacement necessary to make the structure appear amorphous under examination by cross-sectional transmission electron microscopy. However, we found that the amorphous Ge layers were recrystallized due to a local elevation of temperature caused by the implantation, which indicates that the samples should be cooled down during implantation to avoid the regrowth of amorphous Ge layers for this analysis.

本文言語English
ページ(範囲)4546-4548
ページ数3
ジャーナルPhysica B: Condensed Matter
404
23-24
DOI
出版ステータスPublished - 2009 12月 15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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