Room temperature Coulomb blockade and low temperature hopping transport in a multiple-dot-channel metal-oxide-semiconductor field-effect-transistor

Toshiro Hiramoto, Hiroki Ishikuro, Tomoyuki Fujii, Gen Hashiguchi, Toshiaki Ikoma

研究成果: Article査読

16 被引用数 (Scopus)

抄録

We have investigated the transport properties of an extremely narrow channel metal-oxide-semiconductor field-effect-transistor (MOSFET) fabricated by a novel anisotropic etching technique. The device shows clear Coulomb blockade oscillations at room temperature, while aperiodic sharp peaks are observed at low temperatures. Measurements of temperature dependence and magnetic field dependence reveal that the narrow channel of the MOSFET is separated into quantum dots and that not only the resonant tunneling transport but also the thermally activated hopping conduction plays an important role at low temperatures.

本文言語English
ページ(範囲)4139-4142
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
36
6 SUPPL. B
DOI
出版ステータスPublished - 1997 6月
外部発表はい

ASJC Scopus subject areas

  • 工学一般
  • 物理学および天文学一般

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