Room temperature Coulomb blockade and low temperature hopping transport in a multiple-dot-channel metal-oxide-semiconductor field-effect-transistor

Engineering & Materials Science

• Coulomb blockade 100%
• MOSFET devices 63%
• Resonant tunneling 30%
• Anisotropic etching 28%
• Transport properties 22%
• Temperature 21%
• Magnetic fields 15%
• Temperature distribution 14%

Physics & Astronomy

• metal oxide semiconductors 55%
• field effect transistors 42%
• resonant tunneling 31%
• room temperature 30%
• transport properties 21%
• quantum dots 20%
• etching 20%
• conduction 18%
• temperature dependence 17%
• oscillations 17%
• magnetic fields 13%