TY - GEN
T1 - Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots
AU - Tatebayashi, Jun
AU - Kako, Satoshi
AU - Ho, Jinfa
AU - Ota, Yasutomo
AU - Iwamoto, Satoshi
AU - Arakawa, Yasuhiko
N1 - Publisher Copyright:
© 2015 OSA.
PY - 2015/8/10
Y1 - 2015/8/10
N2 - We report the demonstration of room-temperature lasing in a single GaAs nanowire embedding 50-stacked In0.22Ga0.78As/GaAs quantum dots at a lasing emission energy of 1.37 eV with a threshold pump pulse fluence of 138 μm/cm2.
AB - We report the demonstration of room-temperature lasing in a single GaAs nanowire embedding 50-stacked In0.22Ga0.78As/GaAs quantum dots at a lasing emission energy of 1.37 eV with a threshold pump pulse fluence of 138 μm/cm2.
UR - http://www.scopus.com/inward/record.url?scp=84954040934&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84954040934&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84954040934
T3 - Conference on Lasers and Electro-Optics Europe - Technical Digest
BT - 2015 Conference on Lasers and Electro-Optics, CLEO 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Conference on Lasers and Electro-Optics, CLEO 2015
Y2 - 10 May 2015 through 15 May 2015
ER -