Room-temperature photoluminescence observation of stacking faults in 3C-SiC

Rii Hirano, Michio Tajima, Kohei M. Itoh

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

We investigated the optical properties of stacking faults (SFs) in cubic silicon carbide by photoluminescence (PL) spectroscopy and mapping. The room-temperature PL spectra consisted of a 2.3 eV peak due to nitrogen and two undefined broad peaks at 1.7 eV and 0.95 eV. On the PL intensity mapping for the 2.3 eV peak, SFs appeared as dark lines. SFs which expose carbon atoms (SF C) and silicon atoms (SFSi) on the surface appeared as bright lines and dark lines, respectively, in PL mapping for the 1.7 eV and 0.95 eV peaks. We believe the two undefined peaks are associated with SFC. This technique allows us to detect SFs nondestructively and to distinguish between SFC and SFSi. We further suggest the presence of inhomogeneous stress around SFC based on the broadening of the 2.3 eV peak.

本文言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2009
ホスト出版物のサブタイトルICSCRM 2009
出版社Trans Tech Publications Ltd
ページ355-358
ページ数4
ISBN(印刷版)0878492798, 9780878492794
DOI
出版ステータスPublished - 2010
イベント13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
継続期間: 2009 10月 112009 10月 16

出版物シリーズ

名前Materials Science Forum
645-648
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

Other

Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
国/地域Germany
CityNurnberg
Period09/10/1109/10/16

ASJC Scopus subject areas

  • 材料科学一般
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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