抄録
A new method, named saturated photocurrent, has been developed for measuring the optical-absorption coefficient of the semiconductor with consideration of the effect of the interfacial oxide layer. By using this method we can discuss the transmission coefficient for the carriers through the interfacial layer produced on the Schottky barrier solar cell as well as the absorption coefficient of the semiconductor.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 4218-4220 |
| ページ数 | 3 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 54 |
| 号 | 7 |
| DOI | |
| 出版ステータス | Published - 1983 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（全般）