Scalable quantum computing with ion-implanted dopant atoms in Silicon

A. Morello, G. Tosi, F. A. Mohiyaddin, V. Schmitt, V. Mourik, T. Botzem, A. Laucht, J. J. Pla, S. Tenberg, R. Savytskyy, M. Madzik, F. Hudson, A. S. Dzurak, K. M. Itoh, A. M. Jakob, B. C. Johnson, J. C. McCallum, D. N. Jamieson

研究成果: Conference contribution

7 被引用数 (Scopus)

抄録

We present a scalable strategy to manufacture quantum computer devices, by encoding quantum information in the combined electron-nuclear spin state of individual ion-implanted phosphorus dopant atoms in silicon. Our strategy allows a typical pitch between quantum bits of order 200 nm, and retains compatibility with the standard fabrication processes adopted in classical CMOS nanoelectronic devices. We theoretically predict fast and high-fidelity quantum logic operations, and present preliminary experimental progress towards the realization of a 'flip-flop' qubit system.

本文言語English
ホスト出版物のタイトル2018 IEEE International Electron Devices Meeting, IEDM 2018
出版社Institute of Electrical and Electronics Engineers Inc.
ページ6.2.1-6.2.4
ISBN(電子版)9781728119878
DOI
出版ステータスPublished - 2018 7月 2
イベント64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
継続期間: 2018 12月 12018 12月 5

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
2018-December
ISSN(印刷版)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
国/地域United States
CitySan Francisco
Period18/12/118/12/5

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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