Self-consistent modeling of feature profile evolution in plasma etching and deposition

Takashi Shimada; Takashi Yagisawa; Toshiaki Makabe

doi:10.1143/JJAP.45.L132

Self-consistent modeling of feature profile evolution in plasma etching and deposition

Takashi Shimada, Takashi Yagisawa, Toshiaki Makabe

研究成果: Article › 査読

25 被引用数 (Scopus)

抄録

We investigate the relationship between local wall charging and the feature profile in a SiO₂ trench pattern, by considering the transport of electrons, positive ions, and neutral radicals from the two-dimensional sheath structure in a two frequency-capacitively coupled plasma in CF₄(5%)/Ar. Emphasis is given on the influence of both charging and neutral radical accumulation inside the SiO₂ trench during plasma etching. Feature profiles of the SiO₂ trench are estimated by the Level Set method under conditions with/without charging and neutral deposition.

本文言語	English
ページ（範囲）	L132-L134
ジャーナル	Japanese Journal of Applied Physics, Part 2: Letters
巻	45
号	4-7
DOI	https://doi.org/10.1143/JJAP.45.L132
出版ステータス	Published - 2006 2月 3
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

文献へのアクセス

10.1143/JJAP.45.L132

他のファイルとリンク

引用スタイル

@article{d62871acdb08482d8f0a06811c4347cc,

title = "Self-consistent modeling of feature profile evolution in plasma etching and deposition",

abstract = "We investigate the relationship between local wall charging and the feature profile in a SiO2 trench pattern, by considering the transport of electrons, positive ions, and neutral radicals from the two-dimensional sheath structure in a two frequency-capacitively coupled plasma in CF4(5%)/Ar. Emphasis is given on the influence of both charging and neutral radical accumulation inside the SiO2 trench during plasma etching. Feature profiles of the SiO2 trench are estimated by the Level Set method under conditions with/without charging and neutral deposition.",

keywords = "Competitive process, Feature profile evolution, Plasma process, SiO etching, Surface charging",

author = "Takashi Shimada and Takashi Yagisawa and Toshiaki Makabe",

year = "2006",

month = feb,

day = "3",

doi = "10.1143/JJAP.45.L132",

language = "English",

volume = "45",

pages = "L132--L134",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4-7",

}

TY - JOUR

T1 - Self-consistent modeling of feature profile evolution in plasma etching and deposition

AU - Shimada, Takashi

AU - Yagisawa, Takashi

AU - Makabe, Toshiaki

PY - 2006/2/3

Y1 - 2006/2/3

N2 - We investigate the relationship between local wall charging and the feature profile in a SiO2 trench pattern, by considering the transport of electrons, positive ions, and neutral radicals from the two-dimensional sheath structure in a two frequency-capacitively coupled plasma in CF4(5%)/Ar. Emphasis is given on the influence of both charging and neutral radical accumulation inside the SiO2 trench during plasma etching. Feature profiles of the SiO2 trench are estimated by the Level Set method under conditions with/without charging and neutral deposition.

AB - We investigate the relationship between local wall charging and the feature profile in a SiO2 trench pattern, by considering the transport of electrons, positive ions, and neutral radicals from the two-dimensional sheath structure in a two frequency-capacitively coupled plasma in CF4(5%)/Ar. Emphasis is given on the influence of both charging and neutral radical accumulation inside the SiO2 trench during plasma etching. Feature profiles of the SiO2 trench are estimated by the Level Set method under conditions with/without charging and neutral deposition.

KW - Competitive process

KW - Feature profile evolution

KW - Plasma process

KW - SiO etching

KW - Surface charging

UR - http://www.scopus.com/inward/record.url?scp=32044460156&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=32044460156&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.L132

DO - 10.1143/JJAP.45.L132

M3 - Article

AN - SCOPUS:32044460156

SN - 0021-4922

VL - 45

SP - L132-L134

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 4-7

ER -

Self-consistent modeling of feature profile evolution in plasma etching and deposition

抄録

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル