We investigate the relationship between local wall charging and the feature profile in a SiO2 trench pattern, by considering the transport of electrons, positive ions, and neutral radicals from the two-dimensional sheath structure in a two frequency-capacitively coupled plasma in CF4(5%)/Ar. Emphasis is given on the influence of both charging and neutral radical accumulation inside the SiO2 trench during plasma etching. Feature profiles of the SiO2 trench are estimated by the Level Set method under conditions with/without charging and neutral deposition.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 2006 2月 3|
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