Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation

Ryuji Ohba, Daisuke Matsushita, Koichi Muraoka, Shinichi Yasuda, Tetsufumi Tanamoto, Ken Uchida, Shinobu Fujita

    研究成果: Conference contribution

    4 被引用数 (Scopus)

    抄録

    It is shown that sub-0.1/μm Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate smallsize random number generation circuit, which is required for cryptograph application in mobile network security, A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that a small-size random number generator with MHz generation rate, which is applicable for almost all security uses in our computer society, is possible by Si nanocrystal MOSFET device design.

    本文言語English
    ホスト出版物のタイトルProceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006
    ページ231-236
    ページ数6
    DOI
    出版ステータスPublished - 2006 10月 9
    イベントIEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006 - Klarlsruhe, Germany
    継続期間: 2006 3月 22006 3月 3

    出版物シリーズ

    名前Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006
    2006

    Other

    OtherIEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006
    国/地域Germany
    CityKlarlsruhe
    Period06/3/206/3/3

    ASJC Scopus subject areas

    • 工学一般

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