TY - GEN
T1 - Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region
AU - Nonaka, K.
AU - Tsuda, Hiroyuki
AU - Kurokawa, T.
AU - Uenohara, H.
AU - Iwamura, H.
PY - 1992/1/1
Y1 - 1992/1/1
N2 - A new structure InGaAs/InP MQW bistable laser-diode with a sub-waveguide for light injection is demonstrated. Very small sensitivity dependence on input light wavelength (28 nm of 3 dB bandwidth) and high isolation of input versus output (over 30 dB) are observed.
AB - A new structure InGaAs/InP MQW bistable laser-diode with a sub-waveguide for light injection is demonstrated. Very small sensitivity dependence on input light wavelength (28 nm of 3 dB bandwidth) and high isolation of input versus output (over 30 dB) are observed.
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U2 - 10.1109/ISLC.1992.763607
DO - 10.1109/ISLC.1992.763607
M3 - Conference contribution
AN - SCOPUS:85037548503
T3 - Conference Digest - IEEE International Semiconductor Laser Conference
SP - 132
EP - 133
BT - Conference Digest - 13th IEEE International Semiconductor Laser Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 13th IEEE International Semiconductor Laser Conference, ISLC 1992
Y2 - 21 September 1992 through 25 September 1992
ER -