Sign inversion phenomenon of voltage-induced tunnel magnetocapacitance

Takeru Nakagawa, Kentaro Ogata, Yusuke Nakayama, Gang Xiao, Hideo Kaiju

研究成果: Article査読

抄録

Tunnel magnetocapacitance (TMC) in magnetic tunnel junctions (MTJs) has recently attracted interest due to unique properties, such as large magnetic response, thermal stability, and robustness to the bias voltage. In this Letter, we report the sign inversion phenomenon of TMC observed with frequency modulation and dc voltage application to MgO-based MTJs at room temperature. A negative TMC is observed in the frequency region of about kHz due to the appearance of spin capacitance. By applying a dc voltage (a few hundred mV) in this frequency region, the spin flip is promoted in the parallel configuration of MTJs. This results in the observation of the sign inversion of TMC from negative to positive. These physical pictures can be well explained by the calculation based on the modified Debye-Fröhlich model. Our research offers a deeper understanding of AC spin transports, DC spin accumulation, equilibrium and non-equilibrium spin dynamics.

本文言語English
論文番号182403
ジャーナルApplied Physics Letters
118
18
DOI
出版ステータスPublished - 2021 5月 3

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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