Significant Increase in Band Gap and Emission Efficiency of In2O3 Quantum Dots by Size-Tuning around 1 nm in Supermicroporous Silicas

Takafumi Suzuki; Hiroto Watanabe; Taiki Ueno; Yuya Oaki; Hiroaki Imai

doi:10.1021/acs.langmuir.6b04181

Significant Increase in Band Gap and Emission Efficiency of In₂O₃ Quantum Dots by Size-Tuning around 1 nm in Supermicroporous Silicas

Takafumi Suzuki
, Hiroto Watanabe
, Taiki Ueno
, Yuya Oaki
, Hiroaki Imai

応用化学科

研究成果: Article › 査読

39 被引用数 (Scopus)

抄録

The size of In₂O₃ quantum dots (QDs) is tuned from 0.57 to 1.80 nm by using supermicroporous silicas (SMPSs) as a template. The band gap energy and photoluminescence quantum yields of In₂O₃-QDs increase remarkably when their size is decreased below 1 nm.

本文言語	English
ページ（範囲）	3014-3017
ページ数	4
ジャーナル	Langmuir
巻	33
号	12
DOI	https://doi.org/10.1021/acs.langmuir.6b04181
出版ステータス	Published - 2017 3月 28

ASJC Scopus subject areas

材料科学一般
凝縮系物理学
表面および界面
分光学
電気化学

文献へのアクセス

10.1021/acs.langmuir.6b04181

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引用スタイル

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AU - Imai, Hiroaki

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