SIMULATION OF NEAR BALLISTIC ELECTRON TRANSPORT IN A SUBMICRON GaAs DIODE WITH Al//xGa//1// minus //xAs/GaAs HETEROJUNCTION CATHODE.

K. Tomizawa; Y. Awano; N. Hashizume; M. Kawashima

SIMULATION OF NEAR BALLISTIC ELECTRON TRANSPORT IN A SUBMICRON GaAs DIODE WITH Al//xGa//1// minus //xAs/GaAs HETEROJUNCTION CATHODE.

K. Tomizawa, Y. Awano, N. Hashizume, M. Kawashima

研究成果: Article › 査読

抄録

A Monte-Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with an Al//xGa//1// minus //xAs/GaAs heterojunction cathode. The electric field in the diode is self-consistently determined by solving Poisson's equation under reasonable boundary conditions. The distributions of electron energies and electron velocities, and the profiles of the electron density, electric field and average electron velocity, are computed. Based on these data, various properties of the electron transport in a submicron diode with a hot-electron injection mechanism are discussed.

本文言語	English
ページ（範囲）	37-41
ページ数	5
ジャーナル	IEE Proceedings I: Solid State and Electron Devices
巻	132
号	1 pt 1
出版ステータス	Published - 1985 2月 1
外部発表	はい

ASJC Scopus subject areas

工学（全般）

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引用スタイル

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abstract = "A Monte-Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with an Al//xGa//1// minus //xAs/GaAs heterojunction cathode. The electric field in the diode is self-consistently determined by solving Poisson's equation under reasonable boundary conditions. The distributions of electron energies and electron velocities, and the profiles of the electron density, electric field and average electron velocity, are computed. Based on these data, various properties of the electron transport in a submicron diode with a hot-electron injection mechanism are discussed.",

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N2 - A Monte-Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with an Al//xGa//1// minus //xAs/GaAs heterojunction cathode. The electric field in the diode is self-consistently determined by solving Poisson's equation under reasonable boundary conditions. The distributions of electron energies and electron velocities, and the profiles of the electron density, electric field and average electron velocity, are computed. Based on these data, various properties of the electron transport in a submicron diode with a hot-electron injection mechanism are discussed.

AB - A Monte-Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with an Al//xGa//1// minus //xAs/GaAs heterojunction cathode. The electric field in the diode is self-consistently determined by solving Poisson's equation under reasonable boundary conditions. The distributions of electron energies and electron velocities, and the profiles of the electron density, electric field and average electron velocity, are computed. Based on these data, various properties of the electron transport in a submicron diode with a hot-electron injection mechanism are discussed.

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