We have calculated electron states in a lithographically defined Si double quantum dot (DQD) device. Electrons are confined near the upper interface in the silicon-on-insulator (SOI) layer by top gate and side gate voltages. Surface charge density, NS, at 4 K in DQDs is evaluated using experimental data of the gate voltage dependence of NS in a metal-oxide-semiconductor (MOS) transistor at 100 and 4 K. With optimum side gate biases, electrons are confined in QDs and coupling between QDs is controlled in a few-electron regime. We have also proposed that a charge sensor is required to read out the few-electron regime because no current flows in the DQD device.
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