Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel

Kazuhiko Matsumoto; Seizo Kinoshita; Yoshitaka Gotoh; Kousuke Kurachi; Takahumi Kamimura; Masatoshi Maeda; Kazue Sakamoto; Masashi Kuwahara; Nobuhumi Atoda; Yuji Awano

doi:10.1143/jjap.42.2415

Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel

Kazuhiko Matsumoto
, Seizo Kinoshita
, Yoshitaka Gotoh
, Kousuke Kurachi
, Takahumi Kamimura
, Masatoshi Maeda
, Kazue Sakamoto
, Masashi Kuwahara
, Nobuhumi Atoda
, Yuji Awano

研究成果: Article › 査読

58 被引用数 (Scopus)

抄録

Using the patterned chemical catalyst, the position of the carbon nanotube was successfully controlled. Using this carbon nanotube as a channel, the single electron transistor was fabricated. The defects in the carbon nanotube formed spontaneously quantum dots with the size of ∼1 nm. The single electron transistor showed the room-temperature Coulomb diamond characteristics with an ultra-high Coulomb energy of 5000K.

本文言語	English
ページ（範囲）	2415-2418
ページ数	4
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	42
号	4 B
DOI	https://doi.org/10.1143/jjap.42.2415
出版ステータス	Published - 2003 4月
外部発表	はい

ASJC Scopus subject areas

工学一般
物理学および天文学一般

文献へのアクセス

10.1143/jjap.42.2415

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引用スタイル

Matsumoto, K., Kinoshita, S., Gotoh, Y., Kurachi, K., Kamimura, T., Maeda, M., Sakamoto, K., Kuwahara, M., Atoda, N., & Awano, Y. (2003). Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 42(4 B), 2415-2418. https://doi.org/10.1143/jjap.42.2415

Matsumoto, K, Kinoshita, S, Gotoh, Y, Kurachi, K, Kamimura, T, Maeda, M, Sakamoto, K, Kuwahara, M, Atoda, N & Awano, Y 2003, 'Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 42, no. 4 B, pp. 2415-2418. https://doi.org/10.1143/jjap.42.2415

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author = "Kazuhiko Matsumoto and Seizo Kinoshita and Yoshitaka Gotoh and Kousuke Kurachi and Takahumi Kamimura and Masatoshi Maeda and Kazue Sakamoto and Masashi Kuwahara and Nobuhumi Atoda and Yuji Awano",

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AU - Matsumoto, Kazuhiko

AU - Kinoshita, Seizo

AU - Gotoh, Yoshitaka

AU - Kurachi, Kousuke

AU - Kamimura, Takahumi

AU - Maeda, Masatoshi

AU - Sakamoto, Kazue

AU - Kuwahara, Masashi

AU - Atoda, Nobuhumi

AU - Awano, Yuji

PY - 2003/4

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KW - Carbon nanotube

KW - Coulomb diamond

KW - Defect

KW - Room temperature

KW - Single electron transistor

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