@article{397e1ffbb5b249269856377181ccc07c,
title = "Site selective growth of Ge quantum dots on AFM-patterned Si substrates",
abstract = "By combining the atomic force microscope (AFM) local anodic oxidation and etching, a periodic array of nanodimples of ∼40 nm in diameter and ∼3.5 nm in depth has been made on a Si surface. Ge atoms deposited onto this patterned substrate by the MBE method nucleate preferentially in the dimples and form an array of nano Ge dots of about 50 nm in diameter and 10 nm in height.",
keywords = "Atomic force microscopy, Ge quantum dot, Nano lithography, Nano oxidation, Si",
author = "A. Hirai and Itoh, {K. M.}",
note = "Funding Information: We would like to thank H.Z. Song, T. Ohshima, and Y. Okada for their advices on AFM nanooxidation and the technical staff of the Central Service Facilities for Research at Keio University for the assistance with AFM. The work is supported in part by the Fujitsu Laboratories and in part by a Grant-in-Aid for Scientific Research in Priority Areas “Semiconductor Nanospintronics (♯14076215).”; Proceedings of the Fifth International Workshop on Expitaxial ; Conference date: 13-10-2003 Through 15-10-2003",
year = "2004",
month = jul,
doi = "10.1016/j.physe.2003.12.130",
language = "English",
volume = "23",
pages = "248--252",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "3-4 SPEC. ISS.",
}