Sol-gel processing of oxide gate insulator from trifluoroacetate precursors

Keisuke Yamamoto; Shinobu Fujihara; Toshio Kimura

Sol-gel processing of oxide gate insulator from trifluoroacetate precursors

Keisuke Yamamoto, Shinobu Fujihara, Toshio Kimura

応用化学科

研究成果: Conference article › 査読

抄録

A La₂O₃ gate insulator was prepared via LaOF on a silicon substrate to suppress the interface reaction between the gate insulator and silicon substrate. LaOF was formed by heating the precursor solution containing La(NO₃)₃, acetylacetone and trifluoroacetic acid at 400-700°C in N₂. By heating LaOF film at 700°C for 30 min in air, fluorine eliminated completely and La₂O₃ was formed. But silicon-oxide was formed at interface between LaOF heated at 400°C in N₂ and the silicon substrate. To suppress the interface reaction, preparation of the fluoride on silicon will be needed.

本文言語	English
ページ（範囲）	259-262
ページ数	4
ジャーナル	Key Engineering Materials
巻	228-229
出版ステータス	Published - 2002 1月 1
イベント	Asian Ceramic Science for Electronics II Proceedings of the 2nd Asian Meeting of Electroceramics - Kawasaki, Japan 継続期間: 2001 10月 1 → 2001 10月 1

ASJC Scopus subject areas

材料科学（全般）
材料力学
機械工学

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title = "Sol-gel processing of oxide gate insulator from trifluoroacetate precursors",

abstract = "A La2O3 gate insulator was prepared via LaOF on a silicon substrate to suppress the interface reaction between the gate insulator and silicon substrate. LaOF was formed by heating the precursor solution containing La(NO3)3, acetylacetone and trifluoroacetic acid at 400-700°C in N2. By heating LaOF film at 700°C for 30 min in air, fluorine eliminated completely and La2O3 was formed. But silicon-oxide was formed at interface between LaOF heated at 400°C in N2 and the silicon substrate. To suppress the interface reaction, preparation of the fluoride on silicon will be needed.",

keywords = "Fluoride, Lanthanum Oxide, Oxyfluoride, Thin Film",

author = "Keisuke Yamamoto and Shinobu Fujihara and Toshio Kimura",

year = "2002",

month = jan,

day = "1",

language = "English",

volume = "228-229",

pages = "259--262",

journal = "Key Engineering Materials",

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T1 - Sol-gel processing of oxide gate insulator from trifluoroacetate precursors

AU - Yamamoto, Keisuke

AU - Fujihara, Shinobu

AU - Kimura, Toshio

PY - 2002/1/1

Y1 - 2002/1/1

N2 - A La2O3 gate insulator was prepared via LaOF on a silicon substrate to suppress the interface reaction between the gate insulator and silicon substrate. LaOF was formed by heating the precursor solution containing La(NO3)3, acetylacetone and trifluoroacetic acid at 400-700°C in N2. By heating LaOF film at 700°C for 30 min in air, fluorine eliminated completely and La2O3 was formed. But silicon-oxide was formed at interface between LaOF heated at 400°C in N2 and the silicon substrate. To suppress the interface reaction, preparation of the fluoride on silicon will be needed.

AB - A La2O3 gate insulator was prepared via LaOF on a silicon substrate to suppress the interface reaction between the gate insulator and silicon substrate. LaOF was formed by heating the precursor solution containing La(NO3)3, acetylacetone and trifluoroacetic acid at 400-700°C in N2. By heating LaOF film at 700°C for 30 min in air, fluorine eliminated completely and La2O3 was formed. But silicon-oxide was formed at interface between LaOF heated at 400°C in N2 and the silicon substrate. To suppress the interface reaction, preparation of the fluoride on silicon will be needed.

KW - Fluoride

KW - Lanthanum Oxide

KW - Oxyfluoride

KW - Thin Film

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AN - SCOPUS:0036431995

SN - 1013-9826

VL - 228-229

SP - 259

EP - 262

JO - Key Engineering Materials

JF - Key Engineering Materials

T2 - Asian Ceramic Science for Electronics II Proceedings of the 2nd Asian Meeting of Electroceramics

Y2 - 1 October 2001 through 1 October 2001

ER -

Sol-gel processing of oxide gate insulator from trifluoroacetate precursors

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