Sol-gel processing of oxide gate insulator from trifluoroacetate precursors

Keisuke Yamamoto, Shinobu Fujihara, Toshio Kimura

研究成果: Conference article査読


A La2O3 gate insulator was prepared via LaOF on a silicon substrate to suppress the interface reaction between the gate insulator and silicon substrate. LaOF was formed by heating the precursor solution containing La(NO3)3, acetylacetone and trifluoroacetic acid at 400-700°C in N2. By heating LaOF film at 700°C for 30 min in air, fluorine eliminated completely and La2O3 was formed. But silicon-oxide was formed at interface between LaOF heated at 400°C in N2 and the silicon substrate. To suppress the interface reaction, preparation of the fluoride on silicon will be needed.

ジャーナルKey Engineering Materials
出版ステータスPublished - 2002 1月 1
イベントAsian Ceramic Science for Electronics II Proceedings of the 2nd Asian Meeting of Electroceramics - Kawasaki, Japan
継続期間: 2001 10月 12001 10月 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学


「Sol-gel processing of oxide gate insulator from trifluoroacetate precursors」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。