Spin current depolarization under high electric fields in undoped InGaAs

N. Okamoto; H. Kurebayashi; K. Harii; Y. Kajiwara; H. Beere; I. Farrer; T. Trypiniotis; K. Ando; D. A. Ritchie; C. H.W. Barnes; E. Saitoh

doi:10.1063/1.3599599

Spin current depolarization under high electric fields in undoped InGaAs

N. Okamoto, H. Kurebayashi, K. Harii, Y. Kajiwara, H. Beere, I. Farrer, T. Trypiniotis, K. Ando, D. A. Ritchie, C. H.W. Barnes, E. Saitoh

研究成果: Article › 査読

8 被引用数 (Scopus)

抄録

Carrier spin polarization in In_0.13Ga_0.87 As under high electric fields has been investigated. The spin polarization was created by optical spin orientation techniques and the inverse spin-Hall effect was employed to measure the spin polarization. For moderate electric fields, the spin polarization was constant, whereas the significant change in the spin polarization was found in the high electric field range. The spin-density rate equation, together with carrier transport analysis, clarifies that the observed change is attributed to the voltage-induced Auger process which modifies the carrier number in InGaAs.

本文言語	English
論文番号	242104
ジャーナル	Applied Physics Letters
巻	98
号	24
DOI	https://doi.org/10.1063/1.3599599
出版ステータス	Published - 2011 6月 13
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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@article{4832969a7e9b446482aa844cf68855c0,

title = "Spin current depolarization under high electric fields in undoped InGaAs",

abstract = "Carrier spin polarization in In0.13Ga0.87 As under high electric fields has been investigated. The spin polarization was created by optical spin orientation techniques and the inverse spin-Hall effect was employed to measure the spin polarization. For moderate electric fields, the spin polarization was constant, whereas the significant change in the spin polarization was found in the high electric field range. The spin-density rate equation, together with carrier transport analysis, clarifies that the observed change is attributed to the voltage-induced Auger process which modifies the carrier number in InGaAs.",

author = "N. Okamoto and H. Kurebayashi and K. Harii and Y. Kajiwara and H. Beere and I. Farrer and T. Trypiniotis and K. Ando and Ritchie, {D. A.} and Barnes, {C. H.W.} and E. Saitoh",

note = "Funding Information: This work was supported by a Grant-in-Aid for Scientific Research in Priority Area “Creation and control of spin current ” (Grant No. 19048028) from MEXT, Japan, a Grant-in-Aid for Scientific Research (A) (Grant No. 21244058) from MEXT, Japan and a Grant for Industrial Technology Research from NEDO, Japan.",

year = "2011",

month = jun,

day = "13",

doi = "10.1063/1.3599599",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Spin current depolarization under high electric fields in undoped InGaAs

AU - Okamoto, N.

AU - Kurebayashi, H.

AU - Harii, K.

AU - Kajiwara, Y.

AU - Beere, H.

AU - Farrer, I.

AU - Trypiniotis, T.

AU - Ando, K.

AU - Ritchie, D. A.

AU - Barnes, C. H.W.

AU - Saitoh, E.

N1 - Funding Information: This work was supported by a Grant-in-Aid for Scientific Research in Priority Area “Creation and control of spin current ” (Grant No. 19048028) from MEXT, Japan, a Grant-in-Aid for Scientific Research (A) (Grant No. 21244058) from MEXT, Japan and a Grant for Industrial Technology Research from NEDO, Japan.

PY - 2011/6/13

Y1 - 2011/6/13

N2 - Carrier spin polarization in In0.13Ga0.87 As under high electric fields has been investigated. The spin polarization was created by optical spin orientation techniques and the inverse spin-Hall effect was employed to measure the spin polarization. For moderate electric fields, the spin polarization was constant, whereas the significant change in the spin polarization was found in the high electric field range. The spin-density rate equation, together with carrier transport analysis, clarifies that the observed change is attributed to the voltage-induced Auger process which modifies the carrier number in InGaAs.

AB - Carrier spin polarization in In0.13Ga0.87 As under high electric fields has been investigated. The spin polarization was created by optical spin orientation techniques and the inverse spin-Hall effect was employed to measure the spin polarization. For moderate electric fields, the spin polarization was constant, whereas the significant change in the spin polarization was found in the high electric field range. The spin-density rate equation, together with carrier transport analysis, clarifies that the observed change is attributed to the voltage-induced Auger process which modifies the carrier number in InGaAs.

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U2 - 10.1063/1.3599599

DO - 10.1063/1.3599599

M3 - Article

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VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242104

ER -

Spin current depolarization under high electric fields in undoped InGaAs

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