Strain-induced diffusion in heteroepitaxially grown CuInSe2 on GaAs substrates

P. Fons; S. Niki; A. Yamada; A. Okada; D. J. Tweet

Strain-induced diffusion in heteroepitaxially grown CuInSe₂ on GaAs substrates

P. Fons, S. Niki, A. Yamada, A. Okada, D. J. Tweet

研究成果: Conference article › 査読

抄録

A series of CuInSe₂ thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In_0.29Ga_0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe₂ thin film in-plane lattice constant for CuInSe₂ films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In_0.29Ga_0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe₂ layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

本文言語	English
ページ（範囲）	549-554
ページ数	6
ジャーナル	Materials Research Society Symposium - Proceedings
巻	399
出版ステータス	Published - 1996 1月 1
外部発表	はい
イベント	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA 継続期間: 1995 11月 27 → 1995 12月 1

ASJC Scopus subject areas

材料科学（全般）
凝縮系物理学
材料力学
機械工学

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引用スタイル

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title = "Strain-induced diffusion in heteroepitaxially grown CuInSe2 on GaAs substrates",

abstract = "A series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2 layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.",

author = "P. Fons and S. Niki and A. Yamada and A. Okada and Tweet, {D. J.}",

year = "1996",

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pages = "549--554",

journal = "Materials Research Society Symposium - Proceedings",

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TY - JOUR

T1 - Strain-induced diffusion in heteroepitaxially grown CuInSe2 on GaAs substrates

AU - Fons, P.

AU - Niki, S.

AU - Yamada, A.

AU - Okada, A.

AU - Tweet, D. J.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - A series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2 layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

AB - A series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2 layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

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M3 - Conference article

AN - SCOPUS:0029723269

SN - 0272-9172

VL - 399

SP - 549

EP - 554

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 27 November 1995 through 1 December 1995

ER -

Strain-induced diffusion in heteroepitaxially grown CuInSe2 on GaAs substrates

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ASJC Scopus subject areas

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引用スタイル

Strain-induced diffusion in heteroepitaxially grown CuInSe₂ on GaAs substrates