Strain-induced diffusion in heteroepitaxially grown CuInSe2 on GaAs substrates

P. Fons, S. Niki, A. Yamada, A. Okada, D. J. Tweet

研究成果: Conference article査読

4 被引用数 (Scopus)


A series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2 layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

ジャーナルMaterials Research Society Symposium - Proceedings
出版ステータスPublished - 1996 1月 1
イベントProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
継続期間: 1995 11月 271995 12月 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学


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