Strain-induced diffusion in heteroepitaxially grown CuInSe2 on GaAs substrates

P. J. Fons, Shingeru Niki, Akimasa Yamada, Yasumasa Okada, D. J. Tweet

研究成果: Article査読

抄録

A series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. High resolution x-ray diffraction measurements revealed the presence of a second phase strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2 layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

本文言語English
ページ(範囲)39-43
ページ数5
ジャーナルDenshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
60
3
出版ステータスPublished - 1996
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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