Structural analyses of MBE grown cubic and hexagonal GaN epilayers by X-ray diffraction

K. Balakrishnan, P. Fons, H. Okumura, S. Yoshida

研究成果: Article査読

抄録

Detailed X-ray analyses have been carried out on the epilayers of cubic and hexagonal GaN grown on (001) GaAs and (0001) sapphire substrates, respectively, by plasma assisted molecular beam epitaxy (MBE). In order to study the existence of secondary crystallographic phases in the cubic GaN epilayers, X-ray pole figures were generated on (001) surfaces of the samples. The exact locations of misoriented cubic and secondary hexagonal phases have been identified and their relative intensities were estimated. Threading dislocations were observed despite the exhibition of excellent structural properties by the hexagonal GaN epilayers as measured by high resolution X-ray diffraction. A comparison of crystal coherence and mosaicity for the epilayers grown under different growth conditions has been made. A possible explanation is given for the poor electrical characteristics exhibited by the structurally high quality epilayers.

本文言語English
ページ(範囲)93-102
ページ数10
ジャーナルDenshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
62
10
出版ステータスPublished - 1998
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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