@article{87f91a4ec1b24b4a8168fc0e63e7c653,
title = "Structural and Dielectric Study of Thin Amorphous Layers of the Ge–Sb–Te System Prepared by RF Magnetron Sputtering",
abstract = "Abstract: The results of studying the structure and processes of dielectric relaxation in thin layers of Ge–Sb–Te are presented. The found permittivity dispersion and occurrence of dielectric-loss maxima in the low-frequency region are explained by the structural features of the compounds under study.",
keywords = "Ge–Sb–Te chalcogenide system, structural and dielectric properties",
author = "Castro-Arata, {R. A.} and Stozharov, {V. M.} and Dolginsev, {D. M.} and Kononov, {A. A.} and Y. Saito and P. Fons and J. Tominaga and Anisimova, {N. I.} and Kolobov, {A. V.}",
note = "Publisher Copyright: {\textcopyright} 2020, Pleiades Publishing, Ltd.",
year = "2020",
month = feb,
day = "1",
doi = "10.1134/S106378262002013X",
language = "English",
volume = "54",
pages = "201--204",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "Pleiades Publishing",
number = "2",
}