TY - JOUR
T1 - Structural and surface morphology changes in CuInSe2 thin films as a function of Cu/In ratio
AU - Fons, P.
AU - Niki, S.
AU - Yamada, A.
AU - Tweet, D. J.
PY - 1997/1/1
Y1 - 1997/1/1
N2 - Due to its high near bandedge absorption, CuInSe2 is considered to be one of the most promising solar cell materials. As CuInSe2 films are usually grown by metastable processes, the Cu/In ratio often deviates from the ideal ratio of unity. To investigate the structural and morphological changes induced by such stoichiometric variations we have grown a series of epitaxial CuInSe2 epitaxial thin films with varying Cu/In ratios by molecular beam epitaxy on GaAs(001) substrates from elemental sources at a growth temperature of 450 °C. Overall structural, microstructural and surface morphological changes were observed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy, respectively. It was observed that as films deviated from stoichiometry, twinning occurred preferentially on the anion {1·1̄·2} planes.
AB - Due to its high near bandedge absorption, CuInSe2 is considered to be one of the most promising solar cell materials. As CuInSe2 films are usually grown by metastable processes, the Cu/In ratio often deviates from the ideal ratio of unity. To investigate the structural and morphological changes induced by such stoichiometric variations we have grown a series of epitaxial CuInSe2 epitaxial thin films with varying Cu/In ratios by molecular beam epitaxy on GaAs(001) substrates from elemental sources at a growth temperature of 450 °C. Overall structural, microstructural and surface morphological changes were observed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy, respectively. It was observed that as films deviated from stoichiometry, twinning occurred preferentially on the anion {1·1̄·2} planes.
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M3 - Conference article
AN - SCOPUS:0030706868
SN - 0272-9172
VL - 441
SP - 9
EP - 14
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1996 MRS Fall Meeting
Y2 - 2 December 1996 through 6 December 1996
ER -