Photo-induced changes in structure of sol-gel derived SiO2 films were studied in order to explore a possibility of densification of sol-gel films at room temperature using energetic photons. Gel films which were produced on silicon substrates by dip-coating of sols prepared through hydrolysis of tetraethoxysilane were subjected to synchrotron radiation at room temperature. Structural changes of the gel films were investigated by ellipsometry and infrared spectroscopy. The radiation resulted in an increase in refractive index, a decrease in thickness of the films and a loss of OH groups. Increase in temperature of the films was less than 50 °C during the irradiation. The results indicate that ultraviolet lights induce densification of gel films through electronic excitation.
|ジャーナル||Proceedings of SPIE - The International Society for Optical Engineering|
|出版ステータス||Published - 1994 10月 13|
|イベント||Sol-Gel Optics III 1994 - San Diego, United States|
継続期間: 1994 7月 24 → 1994 7月 29
ASJC Scopus subject areas
- コンピュータ サイエンスの応用