Subsurface damage of single crystalline silicon carbide in nanoindentation tests

Jiwang Yan, Xiaohui Gai, Hirofumi Harada

研究成果: Article査読

44 被引用数 (Scopus)

抄録

The response of single crystalline silicon carbide (SiC) to a Berkovich nanoindenter was investigated by examining the indents using a transmission electron microscope and the selected area electron diffraction technique. It was found that the depth of indentation-induced subsurface damage was far larger than the indentation depth, and the damaging mechanism of SiC was distinctly different from that of single crystalline silicon. For silicon, a broad amorphous region is formed underneath the indenter after unloading; for SiC, however, no amorphous phase was detected. Instead, a polycrystalline structure with a grain size of ten nanometer level was identified directly under the indenter tip. Micro cracks, basal plane dislocations and possible cross slips were also found around the indent. These finding provide useful information for ultraprecision manufacturing of SiC wafers.

本文言語English
ページ(範囲)7808-7811
ページ数4
ジャーナルJournal of Nanoscience and Nanotechnology
10
11
DOI
出版ステータスPublished - 2010 11月
外部発表はい

ASJC Scopus subject areas

  • バイオエンジニアリング
  • 化学一般
  • 生体医工学
  • 材料科学一般
  • 凝縮系物理学

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