Superconducting Nb interconnects for Cryo-CMOS and superconducting digital logic applications

Hideaki Numata, Noriyuki Iguchi, Masamitsu Tanaka, Koichiro Okamoto, Sadahiko Miura, Ken Uchida, Hiroki Ishikuro, Toshitsugu Sakamoto, Munehiro Tada

研究成果: Article査読

抄録

A 100 nm wide superconducting niobium (Nb) interconnect was fabricated by a 300 mm wafer process for Cryo-CMOS and superconducting digital logic applications. A low pressure and long throw sputtering was adopted for the Nb deposition, resulting in good superconductivity of the 50 nm thick Nb film with a critical temperature (T c) of 8.3 K. The interconnects had a titanium nitride (TiN)/Nb stack structure, and a double-layer hard mask was used for the dry etching process. The exposed area of Nb film was minimized to decrease the effects of plasma damage during fabrication and atmosphere. The developed 100 nm wide and 50 nm thick Nb interconnect showed good superconductivity with a T c of 7.8 K and a critical current of 3.2 mA at 4.2 K. These results are promising for Cryo-CMOS and superconducting digital logic applications in the 4 K stage.

本文言語English
論文番号04SP73
ジャーナルJapanese journal of applied physics
63
4
DOI
出版ステータスPublished - 2024 4月 1

ASJC Scopus subject areas

  • 工学一般
  • 物理学および天文学一般

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